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UNISONIC TECHNOLOGIES CO., LTD 2SD1816
HIGH CURRENT SWITCHIG APPLICATIONS
FEATURES
* Low collector-to-emitter saturation voltage * Good linearity of hFE * Small and slim package facilitating compactness of sets. * High fT * Fast switching speed
NPN PLANAR TRANSISTOR
ORDERING INFORMATION
Ordering Number Lead Free Halogen Free 2SD1816L-x-TF3-T 2SD1816G-x-TF3-T 2SD1816L-X-TM3-T 2SD1816G-x-TM3-T 2SD1816L-x-TN3-T 2SD1816G-x-TN3-T 2SD1816L-x-TN3-R 2SD1816G-x-TN3-R Package TO-220F TO-251 TO-252 TO-252 Pin Assignment 1 2 3 B C E B C E B C E B C E Packing Tube Tube Tube Tape Reel
www.unisonic.com.tw Copyright (c) 2011 Unisonic Technologies Co., Ltd
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2SD1816
ABSOLUTE MAXIMUM RATINGS (Ta =25 )
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation DC PULSE(Note 1) TO-251/TO-252 TO-220F SYMBOL VCBO VCEO VEBO IC PD
NPN PLANAR TRANSISTOR
Junction Temperature TJ Storage Temperature TSTG Note1: Duty=1/2, Pw=20ms Note2: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
RATINGS 120 100 6 4 8 1 2 +150 -40 ~ +150
UNIT V V V A A W W C C
ELECTRICAL CHARACTERISTICS (Ta=25C, unless otherwise specified)
PARAMETER Collector Base Breakdown Voltage Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Transfer Ratio Transition Frequency Output Capacitance Turn-on Time Storage Time Fall Time SYMBOL BVCBO BVCEO BVEBO VBE(SAT) VCE(SAT) ICBO IEBO hFE1 hFE2 fT Cob tON tSTG tF TEST CONDITIONS IC =10A, IE =0 IC =1mA, RB= IE =10A, IC=0 IC = 2A, IB =0.2A IC = 2A, IB=0.2A VCB = 100 V, IE =0 VEB = 4V, IC=0 VCE = 5V, IC = 0.5A VCE =5V, IC = 3A VCE =10V, IC =0.5A VCB =10V, IE =0A, f =1MHz See test circuit See test circuit See test circuit MIN 120 100 6 TYP MAX UNIT V V V 1.2 V 400 mV 1 A 1 A 400 MHz pF ns ns ns
0.9 150
70 40 180 40 100 900 50
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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2SD1816
CLASSIFICATION of hFE1
RANK RANGE R 100 - 200 S 140 - 280
NPN PLANAR TRANSISTOR
T 200 - 400
Q 70 -140
TEST CIRCUIT
PW=20S Duty Cycle1% INPUT
I B1 RB I B2 50 VR + 100 -5V Ic=10, IB1= -10, IB2=2A Unit (resistance:, capacitance: F) + 470 50V OUTPUT
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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2SD1816
TYPICAL CHARACTERISTICS
NPN PLANAR TRANSISTOR
Colletcor Current, Ic (A)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Colletcor Current, Ic (A)
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2SD1816
TYPICAL CHARACTERISTICS(Cont.)
NPN PLANAR TRANSISTOR
Collector to Emitter Saturation Voltage, VCE(SAT) (mV)
25
DC (T Op a= 25 erat ion )
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Collector Dissipation, PD (W)
Collector Current, IC (A)
Base to Emitter Saturation Voltage, VBE(SAT) (V)
DC e Op n tio ra c= (T 25 )
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